发明名称 FIELD EFFECT TRANSISTOR HAVING A PLURALITY OF FIELD PLATES
摘要 Embodiments include but are not limited to apparatuses and systems including a field-effect transistor switch. A field-effect transistor switch may include a first field plate coupled with a gate electrode, the first field plate disposed substantially equidistant from a source electrode and a drain electrode. The field- effect transistor switch may also include a second field plate proximately disposed to the first field plate and disposed substantially equidistant from the source electrode and the drain electrode. The first and second field plates may be configured to reduce an electric field between the source electrode and the gate electrode and between the drain electrode and the gate electrode.
申请公布号 WO2010120423(A2) 申请公布日期 2010.10.21
申请号 WO2010US27486 申请日期 2010.03.16
申请人 TRIQUINT SEMICONDUCTOR, INC.;TSERNG, HUA, QUEN;DUMKA, DEEP, C.;JONES, MARTIN, E.;CAMPBELL, CHARLES, F.;BALISTRERI, ANTHONY, M. 发明人 TSERNG, HUA, QUEN;DUMKA, DEEP, C.;JONES, MARTIN, E.;CAMPBELL, CHARLES, F.;BALISTRERI, ANTHONY, M.
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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