P-TYPE SEMICONDUCTOR DEVICES

摘要

A semiconductor device comprises an active layer (31) above a first confinement layer (32). The active layer (31) comprises a layer of a-Sn less than 20nm thick. The first confinement layer (32) is formed of material with a wider band gap than a-Sn, wherein the band gap offset between a-Sn and this material allows confinement of charge carriers in the active layer so that the active layer acts as a quantum well. A similar second confinement layer (34) may be formed over the active layer (31). The semiconductor device may be a p-FET. A method of fabricating such a semiconductor device is also described.