| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of stably forming a high precision fine pattern for use in manufacturing processes of semiconductor devices like ICs, manufacturing of circuit boards of liquid crystal, thermal heads, etc., and the other photofabrication processes, a resin composition for use in this method, a developer for use in this method, and a rinsing solution for negative development for use in this method. <P>SOLUTION: A pattern forming method includes: (α) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation; (β) exposing the resist film; and (δ) developing the resist film with a negative developer. A positive resist composition for multiple development for use in the method, a developer for use in the method, and a rinsing solution for negative development for use in the method are provided. <P>COPYRIGHT: (C)2011,JPO&INPIT |
