| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce variation in pattern size due to density dependency of a pattern to be formed during dry etching processing on a light shield film as compared with a case wherein a conventional photomask blank having a light shield film is used, and to manufacture a mask with higher precision. <P>SOLUTION: The present invention relates to a photomask blank as a material for a photomask provided with a mask pattern having, on a transparent substrate 1, a region which is transparent to exposure light and a region which is effectively opaque, the photomask blank having a light shield film 2 which is laminated on the transparent substrate 1 through or not through another film and can be etched by fluorine-based dry etching and made of metal or a metal compound, an etching mask film 4 which is formed on the light shield film 2 and made of metal or a metal compound having resistance to the fluorine-based dry etching, and an antireflective film 3 formed on the etching mask film. <P>COPYRIGHT: (C)2011,JPO&INPIT |
