| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated semiconductor device using SOI wafer that has reduced crystal defects, improved pressure resistance, and reduced leakage current. SOLUTION: When a trench 16 is formed on an SOI wafer, a semiconductor layer 13 is left to have an inclined surface 17 on the bottom of the trench 16. A thick silicon oxide film (second insulating film) 25a is formed along the inclined surface 17. The thick silicon oxide film (second insulating film) 25a prevents oxygen from entering an interface between an embedded insulating layer 12 and the semiconductor layer 13. COPYRIGHT: (C)2011,JPO&INPIT |
