发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A metal member layer on a silicon member layer is patterned. A sidewall film is formed on a surface of the metal member layer. The silicon member layer is patterned to form a structure including the silicon member layer and the metal member layer, the surface of which is covered with the sidewall film. After the surface of the structure is cleaned, a water-repellent protective film is formed on the surface of the structure before the surface of the structure is dried.
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申请公布号 |
US2010267233(A1) |
申请公布日期 |
2010.10.21 |
申请号 |
US20100715727 |
申请日期 |
2010.03.02 |
申请人 |
KOIDE TATSUHIKO;OKUCHI HISASHI;HAYASHI HIDEKAZU;TOMITA HIROSHI |
发明人 |
KOIDE TATSUHIKO;OKUCHI HISASHI;HAYASHI HIDEKAZU;TOMITA HIROSHI |
分类号 |
H01L21/321 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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