发明名称 |
NANOROD THIN-FILM TRANSITORS |
摘要 |
A method for forming an electronic switching device on a substrate, wherein the method comprises depositing the active semiconducting layer of the electronic switching device onto the substrate from a liquid dispersion of ligand-modified colloidal nanorods, and subsequently immersing the substrate into a growth solution to increase the diameter and/or length of the nanorods on the substrate, and wherein the as-deposited nanorods are aligned such that their long-axis is aligned preferentially in the plane of current flow in the electronic switching device.
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申请公布号 |
US2010264403(A1) |
申请公布日期 |
2010.10.21 |
申请号 |
US20060063345 |
申请日期 |
2006.08.09 |
申请人 |
SIRRINGHAUS HENNING;SUN BAOQUAN |
发明人 |
SIRRINGHAUS HENNING;SUN BAOQUAN |
分类号 |
H01L29/775;H01L21/36;H01L29/22 |
主分类号 |
H01L29/775 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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