发明名称 NANOROD THIN-FILM TRANSITORS
摘要 A method for forming an electronic switching device on a substrate, wherein the method comprises depositing the active semiconducting layer of the electronic switching device onto the substrate from a liquid dispersion of ligand-modified colloidal nanorods, and subsequently immersing the substrate into a growth solution to increase the diameter and/or length of the nanorods on the substrate, and wherein the as-deposited nanorods are aligned such that their long-axis is aligned preferentially in the plane of current flow in the electronic switching device.
申请公布号 US2010264403(A1) 申请公布日期 2010.10.21
申请号 US20060063345 申请日期 2006.08.09
申请人 SIRRINGHAUS HENNING;SUN BAOQUAN 发明人 SIRRINGHAUS HENNING;SUN BAOQUAN
分类号 H01L29/775;H01L21/36;H01L29/22 主分类号 H01L29/775
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