发明名称 EXHAUST UNIT OF PLASMA PROCESSING APPARATUS AND EXHAUST METHOD THEREOF
摘要 PURPOSE: An exhaust unit of a plasma processing device and a ventilation method thereof are provided to improve process uniformity by preventing a plasma yaw phenomenon during a fabrication processing process. CONSTITUTION: An exhaust line(116) is connected to an exhaust pipe(114) which is formed in the bottom side of a chamber. The exhaust line converts the inside of the chamber(110) into a vacuum state by executing a center pumping process. A valve(116a), which connects or disconnects the inside of the chamber to a second buffer space part(132), is included in the exhaust line. An APC(Automatic Pressure Control) valve(120) is connected to one side of the chamber. A TMP(Turbo Molecular Pump)(130) is connected to the different end of the exhaust line and the APC valve.
申请公布号 KR20100113326(A) 申请公布日期 2010.10.21
申请号 KR20090031833 申请日期 2009.04.13
申请人 LIGADP CO., LTD. 发明人 YOUN, JONG WEON;JEONG, JIN YEOL
分类号 H01L21/00;H01L21/205;H01L21/3065 主分类号 H01L21/00
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