发明名称 |
EXHAUST UNIT OF PLASMA PROCESSING APPARATUS AND EXHAUST METHOD THEREOF |
摘要 |
PURPOSE: An exhaust unit of a plasma processing device and a ventilation method thereof are provided to improve process uniformity by preventing a plasma yaw phenomenon during a fabrication processing process. CONSTITUTION: An exhaust line(116) is connected to an exhaust pipe(114) which is formed in the bottom side of a chamber. The exhaust line converts the inside of the chamber(110) into a vacuum state by executing a center pumping process. A valve(116a), which connects or disconnects the inside of the chamber to a second buffer space part(132), is included in the exhaust line. An APC(Automatic Pressure Control) valve(120) is connected to one side of the chamber. A TMP(Turbo Molecular Pump)(130) is connected to the different end of the exhaust line and the APC valve.
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申请公布号 |
KR20100113326(A) |
申请公布日期 |
2010.10.21 |
申请号 |
KR20090031833 |
申请日期 |
2009.04.13 |
申请人 |
LIGADP CO., LTD. |
发明人 |
YOUN, JONG WEON;JEONG, JIN YEOL |
分类号 |
H01L21/00;H01L21/205;H01L21/3065 |
主分类号 |
H01L21/00 |
代理机构 |
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主权项 |
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