发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit capable of alleviating load variations in an amplifier caused by uneven quality for resistive elements or influence on amplification characteristics caused by temperature change, which is produced during manufacturing of the semiconductor integrated circuit. SOLUTION: The semiconductor integrated circuit includes an amplifier circuit 2, a bias circuit 3, a monitor resistive element 5MR, a measuring terminal 6, and a plurality of adjusting resistive elements 71. The bias circuit 3 performs voltage conversion of the current from a band gap reference current source 5 having a resistive element formed in a circuit fashion on a semiconductor substrate, and supplies bias voltage to the amplifier circuit 2. The monitor resistive element 5MR is formed in the bias circuit 3 by semiconductor joining. The measuring terminal 6 is prepared on semiconductor substrate and measures the monitor resistive element 5MR. The plurality of adjusting resistive elements 71 constitute a part of the band gap reference current source 5, and have different resistance value for adjusting circuit current. When a resistance value of the monitor resistive element 5MR is low compared with a desired value, an adjusting resistive element having a resistance value higher than the desired value is chosen. When the resistance value of the monitor resistive element 5MR is high compared with the desired value, an adjusting resistive element having a resistance value lower than the desired value is chosen. Bias voltage of the amplifier circuit 2 is adjusted according to the choice. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010239191(A) 申请公布日期 2010.10.21
申请号 JP20090082035 申请日期 2009.03.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 KAGANO MIKI
分类号 H03F3/343;G05F3/30;H03F1/30 主分类号 H03F3/343
代理机构 代理人
主权项
地址