| 摘要 |
PROBLEM TO BE SOLVED: To prevent protrusions from being formed on the surface of a crystal thin film during crystallizing an amorphous thin film by melt heating. SOLUTION: During crystallization by the melt heating, a buffer layer 3 buffering the volume change of the amorphous thin film 4 when crystallized by being melt at least its surface side and solidified is provided below the thin film 4. By merely adding one simple step of forming the buffer layer, the height of protrusions of the crystallized thin film can be sufficiently low in crystallization, resulting in a sufficiently thin insulating film. Furthermore, it is not necessary to introduce useless steps of such as polishing and etching when the protrusions are formed, thereby, enabling to achieve effects of such as prevention of the occurrence of contamination, improvement of the yield, and improvement of manufacturing efficiency. COPYRIGHT: (C)2011,JPO&INPIT
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