| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal growth method which enables the growth of a crystal which has excellent interface steepness at a heterojunction interface, in a shower head type MOCVD apparatus with a gas middle chamber. SOLUTION: The crystal growth method which is a vapor phase growth method using an MOCVD apparatus 10, includes a first film formation step of forming a first semiconductor layer in a film formation target substrate 3 by supplying a first group III element gas to a group III system gas middle chamber 23a, a second film formation step of forming a second semiconductor layer in the film formation target substrate 3, and a remaining gas discharge step of performing either of supply steps of increasing the quantity of a group III carrier gas beyond that in the first film formation step and supplying the group III carrier gas to the group III system gas middle chamber 23a when the first group III element gas is different from a second group III element gas, or increasing the quantity of a group V system carrier gas beyond that in the first film formation step and supplying the group V system carrier gas to a group V system gas middle chamber 24a when a first group V element gas is different from a second group V element gas. COPYRIGHT: (C)2011,JPO&INPIT
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