| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus that can uniform the film thickness of a treatment liquid for treating a substrate, and to provide a substrate treatment method. SOLUTION: The substrate treatment apparatus includes a rotary table 16 that is rotated and driven while holding a semiconductor wafer W, an upper nozzle 51 and a slant nozzle 71 for jetting a treatment liquid to the semiconductor wafer from their tips and a controller 7. The upper nozzle 51 is provided with a first temperature regulating unit 61 and a first concentration regulating unit 62 that can adjust the temperature and concentration of the treatment liquid to be jetted, and the slant nozzle 71 is provided with a third temperature regulating unit 76 and a second concentration regulating unit 77 that can adjust the temperature and concentration of the treatment liquid to be jetted. The controller 7 adjusts at least either of the temperature and concentration of the treatment liquid to be jetted from the upper nozzle 51 and the slant nozzle 71, thus adjusting the thickness of the liquid film of the treatment liquid on the semiconductor wafer W. COPYRIGHT: (C)2011,JPO&INPIT
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