发明名称 |
Verfahren zum Herstellen eines Dünnschichttransistors und Dünnschichttransistor |
摘要 |
<p>[Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor. [Solving Means] In a method of producing a thin-film transistor according to the present invention, a solid-state green laser is irradiated onto a channel portion of an amorphous silicon film using a source electrode film and a drain electrode film as masks, thereby improving mobility. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of the solid-state green laser, laser oscillation characteristics can be more stable than in a conventional method that uses an excimer laser. Further, laser irradiation onto a large-size substrate at uniform output characteristics in plane becomes possible, with the result that a variation in crystallinity of channel portions among devices can be avoided. Moreover, since a maintenance cycle of a laser oscillator becomes longer, a downtime cost of the apparatus can be reduced and productivity can be improved.</p> |
申请公布号 |
DE112008003488(T5) |
申请公布日期 |
2010.10.21 |
申请号 |
DE20081103488T |
申请日期 |
2008.12.12 |
申请人 |
ULVAC INC. |
发明人 |
MORIMURA, TARO;KIKUCHI, TORU;HASHIMOTO, MASANORI;ASARI, SHIN;SAITO, KAZUYA;NAKAMURA, KYUZO |
分类号 |
H01L21/336;H01L21/20;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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