| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist material, typically, a chemically amplified positive resist comprising a specific a polymer compound as a base resin, which exhibits a high resolution surpassing conventional art positive resist compositions and forms a resist film having a minimal edge roughness and a good pattern profile after exposure, and to provide a patterning process. <P>SOLUTION: The positive resist material comprises, as a base resin, a polymer compound which has a recurring unit having carboxyl groups whose hydrogen is substituted by an acid labile group, and has a recurring unit having a group expressed by general formula (1) and has a weight average molecular weight of 1,000 to 500,000. In general formula (1), X represents -NH- or -S-. This positive resist material exhibits a remarkably high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and a minimal line edge roughness after exposure, and a significant effect of suppressing acid diffusion rate. Consequently, the positive resist material, typically, the chemically amplified positive resist material suited as a fine pattern-forming material for the fabrication of VLSIs or photomasks and a pattern-forming material for EUV lithography can be obtained. <P>COPYRIGHT: (C)2011,JPO&INPIT |
