SOLID STATE IMAGING DEVICE AND IMAGING APPARATUS

摘要

PROBLEM TO BE SOLVED: To achieve both of actualization of a sufficient hole accumulation layer and reduction in dark current.

SOLUTION: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: a plurality of pixel sections each having a light sensing section having a film formed on a light receiving surface of the light sensing section and lowering an interface state and a film formed on the film lowering the interface state and having negative electric charges, a hole accumulation layer being formed on the light receiving surface side of the light sensing section, and the light sensing section converting an incident light quantity into an electric signal; and a wiring layer provided on one surface side of a semiconductor substrate where the pixel sections are formed. The solid state imaging device may be applied as a back illuminated solid state imaging device having a configuration in which light incident from a side opposite a surface on which the wiring layer is formed is received in each of the light sensing sections.

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