发明名称 METHOD OF MANUFACTURING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To mitigate stress on non-irradiated region in the irradiation period of laser for laser lift-off. <P>SOLUTION: In 2. A, an enlarged element region A1 has already been irradiated with the laser until the preceding step, a stress mitigating region B2 and an enlarged element region A2 are irradiated with the laser in this step, and stress mitigating regions B3, B4 and enlarged element regions A3, A4 are not yet irradiated with the laser. Nitrogen gas is generated through decomposition at an area near the interface with an epitaxial growth substrate 100 of an n-type layer 11 of the stress mitigating region B2 and enlarged element region A2 and is exhausted from channels tr1b, tr2a, and tr2b. In this case, very large volume expansion is generated. An epitaxial layer 10 of the enlarged element region A1 is separated from the epitaxial growth substrate 100 and is therefore freed from a large stress. An epitaxial layer 10 of the stress mitigating region B3 is bonded with the epitaxial growth substrate 100, a large stress is applied to the epitaxial layer. However, a stress is not directly applied to the enlarged element region A3 located further in the right side of the epitaxial layer. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010238922(A) 申请公布日期 2010.10.21
申请号 JP20090085437 申请日期 2009.03.31
申请人 TOYODA GOSEI CO LTD 发明人 KAMIMURA TOSHIYA;OHASHI MASAHIRO
分类号 H01L33/30 主分类号 H01L33/30
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