发明名称 MULTILAYERED SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the effect of heat dissipation in a multilayered semiconductor device, by dispersing processing inputs to a plurality of processor cores and operation performing blocks mounted in layers. SOLUTION: The multilayered semiconductor device is such as to have a plurality of processing blocks arranged in each layer, and a control block for controlling the processing inputs to the processing block so that the activity state by the processing block in action is dispersed. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010239029(A) 申请公布日期 2010.10.21
申请号 JP20090087251 申请日期 2009.03.31
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 TATSUOKA MASATO
分类号 H01L27/00;G06F9/50;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L27/00
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