发明名称 Methods of forming a pattern using photoresist compositions
摘要 A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.
申请公布号 US2010266966(A1) 申请公布日期 2010.10.21
申请号 US20100662455 申请日期 2010.04.19
申请人 PARK JI-MAN;KIM YOUNG-HO;YUN HYO-JIN;AHN SUN-YUL;YI SONG-SE;PARK KYUNG-WOO 发明人 PARK JI-MAN;KIM YOUNG-HO;YUN HYO-JIN;AHN SUN-YUL;YI SONG-SE;PARK KYUNG-WOO
分类号 G03F7/20 主分类号 G03F7/20
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