| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which is free of a process defect in manufacturing of the device and has a p-type base ohmic contact of low resistance. <P>SOLUTION: In an ion implantation process, a silicon carbide wafer is held at a temperature of 175 to 300°C, preferably, 175 to 200°C. Resistivity of a p-type base ohmic contact using a p++ region formed by ion implantation at 175 to 300°C is 8E-4Ωcm<SP>2</SP>or less, and less than that when ion implantation is carried out at a temperature of >300°C. Further, no process defect is caused. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
