| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting element capable of simply widening a contact area between a p-side electrode and a p-type contact layer to obtain the semiconductor light-emitting element having a low operating voltage. SOLUTION: By the use of an overhang-shaped resist pattern 91 formed on an upper surface 46a of a waveguide ridge, a metal film 60 is formed on the upper surface 46a of the waveguide ridge 46 so as to have a step at the end of an insulating film 50 and the insulating film 50 on the upper surface 46a of the waveguide ridge is etched with the metal film 60 as a mask to widen an opening width of an opening 50a formed at the insulating film 50 without forming a new masking step. As a result, a contact area between the p-side electrode 70 and the p-type contact layer 45 can be expanded. COPYRIGHT: (C)2011,JPO&INPIT
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