发明名称 |
METHOD OF EVALUATING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND PROBE |
摘要 |
PROBLEM TO BE SOLVED: To reproduce causes of malfunctions in a method of evaluating a semiconductor device and a method of manufacturing the semiconductor device, and a probe. SOLUTION: The method of evaluating the semiconductor device includes the steps of: applying a conductive coating film 40 on an insulating film of a semiconductor device 50 equipped with an element R; contacting a probe 103 to the conductive coating film 40 and giving a potential difference V between a silicon substrate 10 and the probe 103 with which the semiconductor device 50 is equipped; and evaluating an electrical characteristic of the element R in the state where the potential difference v is given. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2010238939(A) |
申请公布日期 |
2010.10.21 |
申请号 |
JP20090085747 |
申请日期 |
2009.03.31 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
HAYAKAWA TAKESHI;ITO EIKO;SASAKI TAKAYOSHI;NAGASAWA MASAKI |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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