发明名称 METHOD OF EVALUATING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND PROBE
摘要 PROBLEM TO BE SOLVED: To reproduce causes of malfunctions in a method of evaluating a semiconductor device and a method of manufacturing the semiconductor device, and a probe. SOLUTION: The method of evaluating the semiconductor device includes the steps of: applying a conductive coating film 40 on an insulating film of a semiconductor device 50 equipped with an element R; contacting a probe 103 to the conductive coating film 40 and giving a potential difference V between a silicon substrate 10 and the probe 103 with which the semiconductor device 50 is equipped; and evaluating an electrical characteristic of the element R in the state where the potential difference v is given. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010238939(A) 申请公布日期 2010.10.21
申请号 JP20090085747 申请日期 2009.03.31
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 HAYAKAWA TAKESHI;ITO EIKO;SASAKI TAKAYOSHI;NAGASAWA MASAKI
分类号 H01L21/66 主分类号 H01L21/66
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