摘要 |
<p>The present invention is an apparatus for producing a single crystal, growing the single crystal by the Czochralski method and comprising at least: a main chamber in which a crucible for accommodating a raw material melt and a heater for heating the raw material melt are arranged; a pulling chamber into which the grown single crystal is pulled and accommodated, the pulling chamber being continuously provided above the main chamber; and a cooling cylinder extending at least from a ceiling of the main chamber toward a surface of the raw material melt so as to surround the single crystal during pulling, the cooling cylinder being forcibly cooled with a cooling medium. As a result, there is provided an apparatus for producing a single crystal that can increase the growth rate of the single crystal by efficiently cooling the single crystal during the growth.</p> |