| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode which has emission wavelength of 655 nm or more and which is superior in monochromaticity, generates high output, and has high efficiency and a fast response speed. <P>SOLUTION: The light-emitting diode 1 includes a compound semiconductor layer 2 which at least includes a pn-junction-type light-emitting section 7 and a distortion adjusting layer 8 laminated on the light-emitting layer 7. The light-emitting section 7 has: the laminated structure of the distortion light-emitting layer expressed by a composition formula of (Al<SB>X</SB>Ga<SB>1-X</SB>)<SB>Y</SB>In<SB>1-Y</SB>P (wherein X and Y are the values satisfying inequalities of 0≤X≤0.1 and 0.37≤Y≤0.46, respectively); and a barrier layer. The distortion adjusting layer 8 is transparent to the light-emitting wavelength and has a lattice constant smaller than that of the distortion light-emitting layer and that of the barrier layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
