METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR COMPOSITE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for obtaining a circuit and element formation region of high quality having a flat separated surface from an Si substrate, and to provide the semiconductor device and a semiconductor composite device.

SOLUTION: The method for manufacturing the semiconductor device includes a first step of forming a separate island 110 including the circuit and element formation region 102a on a surface of the Si (111) substrate 101, and a second step of forming a coating layer 210 covering a surface of the circuit and element formation region and at least part of a side face of the separate island, wherein the Si (111) substrate where the coating layer is formed is etched along a (111) plane to separate the whole or part of the separate island.

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