ORGANOMETALLIC PRECURSOR COMPOUND FOR THIN FILM VAPOR DEPOSITION OF METALLIC OR METAL OXIDE THIN FILM AND METHOD FOR THIN FILM VAPOR DEPOSITION USING SAME

摘要

The present invention relates to an organometallic precursor compound for vapor deposition of a ceramic thin film such as metal and metal oxide that is applied to a semiconductor device; the present invention provides an organometallic precursor compound for vapor deposition of a metal or metal oxide thin film and a method for thin film vapor deposition using the same, affording high thermal stability and high vapor pressure so that its characteristics do not deteriorate under continued heating, and it can be usefully applied to the semiconductor manufacturing process wherein ceramic thin films such as metal and metal oxide thin films are deposited by metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD).