METHOD FOR PRODUCING SPUTTERING TARGET FOR PHASE CHANGE MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a sputtering target for a phase change memory capable of improving the rewriting properties and crystallization speed of the phase change memory and to provide a method for producing the same.

SOLUTION: The sputtering target for the phase change memory is composed of elements of not less than a three component system and has as its principal component one or more components selected from antimony, tellurium and selenium, and the compositional deviation in relation to the intended composition of ±1.0 at% or less. A film for the phase change memory is formed by using the target.

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