发明名称 |
SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME AND IMAGING APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To achieve both of actualization of a sufficient hole accumulation layer and reduction in dark current. <P>SOLUTION: A solid-state imaging device 8 having a light sensing section 12 that performs photoelectric conversion of incident light includes: an insulating film 31 which is formed on the side of a light-receiving surface 12s of the light sensing section 12; and a film 32 which is formed on the insulating film 31 and has a larger value of work function than an interface on the side of the light-receiving surface 12s of the light sensing section 12. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2010239155(A) |
申请公布日期 |
2010.10.21 |
申请号 |
JP20100146816 |
申请日期 |
2010.06.28 |
申请人 |
SONY CORP |
发明人 |
OSHIYAMA ITARU;ANDO TAKASHI;HIYAMA SUSUMU;YAMAGUCHI TETSUJI;OGISHI HIROKO;IKEDA HARUMI |
分类号 |
H01L27/146;H01L27/148;H01L31/00;H01L31/10;H04N5/335;H04N5/361;H04N5/369 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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