METHOD FOR PRODUCING SILICON EPITAXIAL WAFER

摘要

Disclosed is a method for producing a silicon epitaxial wafer, which comprises: a growth step F in which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step D in which at least the surface of the silicon single crystal substrate is polished without using abrasive grains before the growth step; and a second polishing step G in which at least the surface of the silicon single crystal substrate is subjected to finish polishing after the growth step.