发明名称 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, AND PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a silicon-containing film-forming composition with which a silicon-containing film excellent in storage stability and adhesion to a resist film can be formed and a resist pattern excellent in bottom shape without tailing can be stably formed. <P>SOLUTION: The silicon-containing film-forming composition includes a polysiloxane and an organic solvent containing a structural unit (a1) of tetraalkoxysilane, a structural unit (a2) as in a formula (1), and a structural unit (a3) as in a formula (2). In the formula (1), R<SP>1</SP>indicates independently a hydrogen atom or an electron-donating group. At least one R<SP>1</SP>is an electron-donating group. R<SP>2</SP>represents a monovalent organic group. n represents 0 or 1. In the formula (2), R<SP>3</SP>represents a 1-8C alkyl group. R<SP>4</SP>represents a monovalent organic group. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010237667(A) 申请公布日期 2010.10.21
申请号 JP20100053791 申请日期 2010.03.10
申请人 JSR CORP 发明人 KAWAZU TOMOHARU;TANAKA MASATO;MORI TAKASHI;TAKANASHI KAZUNORI;YASUDA YOSHITOMO
分类号 G03F7/11;G03F7/26;H01L21/027;H01L21/3065 主分类号 G03F7/11
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