| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified photoresist composition which has superior resolution and line edge roughness and allows formation of a pattern free from pattern collapse. <P>SOLUTION: The chemically amplified photoresist composition contains an acid generator (A) and a resin (B), wherein the resin (B) contains at least a structural unit (b1) which produces a carboxyl group by the action of an acid to become soluble in an alkaline developer, a structural unit (b2) containing an adamantyl group having at least two -OX<SP>a</SP>groups (X<SP>a</SP>represents a group capable of dissociating by the action of an acid), and a structural unit (b3) derived from a monomer having a lactone ring. <P>COPYRIGHT: (C)2011,JPO&INPIT |
