发明名称 Standard Cells Having Flexible Layout Architecture/Boundaries
摘要 An integrated circuit layout includes a standard cell, which includes a first gate strip and a second gate strip parallel to each other and having a gate pitch; a first boundary and a second boundary on opposite ends of the first standard cell; and a third boundary and a fourth boundary on opposite ends of the first standard cell and parallel to the first gate strip and the second gate strip. A cell pitch between the third boundary and the fourth boundary is not equal to integer times the gate pitch. A PMOS transistor is formed of the first gate strip and a first active region. An NMOS transistor is formed of the first gate strip and a second active region.
申请公布号 US2010269081(A1) 申请公布日期 2010.10.21
申请号 US20100697887 申请日期 2010.02.01
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HOU YUNG-CHIN;SCOTT DAVID BARRY;LU LEE-CHUNG;TIEN LI-CHUN
分类号 G06F17/50 主分类号 G06F17/50
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