| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition superior in lithography characteristics such as resolution and an MEF (Mask Error Factor), to provide a resist pattern forming method using the positive resist composition, and a high molecular compound useful for the positive resist composition. <P>SOLUTION: The positive resist composition contains a base component (A) of which the solubility in an alkaline developer is increased by the action of an acid, and an acid generator component (B) which generates an acid by exposure to light, wherein the base component (A) contains a high molecular compound (A1) which has: a structural unit (a<SB>N</SB>) including a nitrogen atom in its side chain, and a (meth)acrylate unit (a0) having an ester bond having an acid-dissociable group, in its side chain via a linking group. <P>COPYRIGHT: (C)2011,JPO&INPIT |
