| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which manufactures a template by using a sidewall transfer process without lowering a production yield of the template, and simplifies a manufacturing process as compared with a prior imprint lithography process. <P>SOLUTION: A mask layer is formed on an object to be processed, a template having a device-forming pattern of a closed-loop structure in which gaps between edges of pattern forming a pair of line parts adjoin each other is pressed to an upper part of the mask layer via an imprint element, and the imprint element is solidified. Then the mask layer is etched using the imprint element as a mask to form the mask, a resist pattern for removing the edges of a line of a pattern of the closed loop structure is formed, the edge of the line of the pattern of the closed loop structure is removed by using the resist pattern, and the object to be processed is etched by using a mask including a pattern where the edge of the line of the pattern of the closed loop structure is removed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
