| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which controls production of columnar remanent. SOLUTION: The method of manufacturing the semiconductor device 10 includes a step which forms a wiring layer 14 on a substrate 12, a step which forms an interlayer dielectric 20 being laminated with a third insulating film 22, a second insulating film (SiN film) 24, and a first insulating film (PSG film) 26 in order to cover the substrate 12 and wiring layer 14, a step which forms a mask pattern on the first insulating film 26, a step which removes a section forming a contact hole 30 of the first insulating film 26 by a wet etching, a step which removes the section forming the contact hole 30 of the second insulating film 24 by an etching containing at least isotropic dry etching, a step which removes the section forming the contact hole 30 of the third insulating film 22 by etching, and a step which forms the contact hole 30 through the interlayer dielectric 20 so as to expose the wiring layer 14 after the above steps. COPYRIGHT: (C)2011,JPO&INPIT |
