ANNEAL WAFER, METHOD FOR MANUFACTURING ANNEAL WAFER, AND METHOD FOR MANUFACTURING DEVICE

摘要

An anneal wafer is provided by performing rapid heat treatment to a silicon single crystal wafer cut out from a silicon single crystal ingot, which is grown by a CZ method, has the entire surface composed of an OSF region or an N region outside of the OSF region or a region wherein the OSF region and the N region are mixed. In the anneal wafer, there is no RIE defect within a depth of at least 1 µm from the surface, the rate of acceptable products with respect to TDDB characteristics is 80% or more, and the depth of the region where the oxygen concentration is reduced due to out-diffusion is within 3 µm from the surface. A method for manufacturing the anneal wafer is also provided. The wafer does not have oxygen-related defects, such as oxygen precipitate, COP and OSF nucleus, while sufficiently ensuring the strength of the surface layer with least reduction of the oxygen concentration of the surface layer induced due to the out-diffusion, does not have a grow-in defect and has excellent TDDB characteristics.