| 摘要 |
FIELD: metallurgy. ^ SUBSTANCE: crucible 1 for crystallisation of silicon consists of base 2 with lower surface 21 and side walls 22, forming internal volume, and of protecting coating 3 containing from 80 to 95 wt % of silicon nitride and from 5 to 20 % of low temperature mineral binding material at complete contents of oxygen within range from 5 to 15 % in weight. ^ EFFECT: protective coating can be applied fast and efficiently, is more durable and possesses improved cohesion with crucible walls. ^ 13 cl, 2 tbl, 1 dwg |
