发明名称 |
Single photon avalanche diode for CMOS circuits |
摘要 |
<p>A single photon avalanche diode for use in a CMOS integrated circuit includes a deep n-well region formed above a p-type substrate and an n-well region formed above and in contact with the deep n-well region. A cathode contact is connected to the n-well region via a heavily doped n-type implant. A lightly doped region forms a guard ring around the n-well and deep n-well regions. A p-well region is adjacent to the lightly doped region. An anode contact is connected to the p-well region via a heavily doped p-type implant. The junction between the bottom of the deep n-well region and the substrate forms a multiplication region when an appropriate bias voltage is applied between the anode and cathode and the guard ring breakdown voltage is controlled with appropriate control of the lateral doping concentration gradient such that the breakdown voltage is higher than that of the multiplication region.</p> |
申请公布号 |
GB201014843(D0) |
申请公布日期 |
2010.10.20 |
申请号 |
GB20100014843 |
申请日期 |
2010.09.08 |
申请人 |
UNIVERSITY COURT OF THE UNIVERSITY OF EDINBURGH, THE |
发明人 |
|
分类号 |
|
主分类号 |
|
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|