| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the property of a transistor by preventing a leakage current on a semiconductor substrate through a second thermal process when an amorphous silicon layer is formed. CONSTITUTION: A metal layer is formed on a semiconductor substrate(300). The metal layer is changed into a first metal silicide layer through a first thermal process. A silicon layer(350) is formed on the first metal silicide layer. A nitride layer(355) is formed on the silicon layer. The first metal silicide layer is changed into a second metal silicide layer(370) through a second thermal process(360).
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