| 摘要 |
<p>A method of forming an organic thin film transistor includes a process for aligning the organic semiconductor molecules to improve charge mobility in the channel region. A surface outside the channel region is seeded with one or more crystallisation sites 14, 16 prior to deposition of a solution of the organic semiconductor 8 onto the seeded surface and over the channel region. The crystallisation sites may comprise boundaries between surface patterns with differing wetting properties, or physical structures. The organic semiconductor forms a crystal domain at the crystallisation sites (fig 4; 8), the crystal domain growing from its crystallisation site across the channel region in a direction determined by an advancing surface evaporation front. The direction and rate of movement of the surface evaporation front is controlled for example by dragging a shearing substrate in contact with the orgainic semiconductor thereby controlling the direction and rate of growth of each crystal domain across the channel region from the crystallisation sites.</p> |
