| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve mechanical property by reducing pore contents in a low dielectric layer by forming an air-gap in the low dielectric layer and removing a mask pattern. CONSTITUTION: A plurality of conductive patterns(P) separated by a low dielectric layer are formed on the upper side of a semiconductor substrate(100). A first protection layer(108) is formed on the conductive pattern and the low dielectric layer. A mask pattern is formed on the first protection layer. A hole between the conductive patterns is formed by etching the first protection layer and the low dielectric layer. An air gap(A) is formed on the low dielectric layer and the mask pattern is removed.
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