发明名称 |
BONDED WAFER MANUFACTURING METHOD |
摘要 |
The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided. |
申请公布号 |
EP2175477(A4) |
申请公布日期 |
2010.10.20 |
申请号 |
EP20080776766 |
申请日期 |
2008.07.03 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
KOBAYASHI, NORIHIRO;AGA, HIROJI;NAGAOKA, YASUO;NOTO, NOBUHIKO |
分类号 |
H01L21/02;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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