发明名称 |
Semiconductor optoelectronic device |
摘要 |
Provided is a semiconductor opto-electronic device including: an active layer including a quantum well and a barrier layer; upper and lower waveguide layers formed on and underneath the active layer, respectively; upper and lower clad layers formed on and underneath the upper and lower waveguide layers, respectively; a substrate supporting the resultant stack structure; an upper optical confinement layer (OCL) provided between the active layer and the upper and lower waveguide layers and having an energy gap smaller than an energy gap of the upper waveguide layer and equal to or larger than an energy gap of the barrier layer; and a lower OCL having an energy gap smaller than an energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. |
申请公布号 |
EP1914813(A3) |
申请公布日期 |
2010.10.20 |
申请号 |
EP20070106325 |
申请日期 |
2007.04.17 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
SON, JOONG-KON;RYU, HAN-YOUL;SAKONG, TAN;PAEK, HO-SUN;LEE, SUNG-NAM |
分类号 |
H01S5/343;H01L33/00;H01S5/00;H01S5/20;H01S5/32;H01S5/34 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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