| 摘要 |
FIELD: physics. ^ SUBSTANCE: method of passivating a GaAs surface involves chemical cleaning of the surface of a GaAs surface, oxidation in a solution of hydrogen peroxide H2O2 for 1-10 minutes, chalcogenisation in a (NH4)2S solution and removal of solution residue. After chemical cleaning of the surface of the GaAs plate and its oxidation, it is preferred to route manufacturing of the semiconductor device and carry out chalcogenisation of the GaAs directly before depositing thin metal films or a thin dielectric film. ^ EFFECT: invention improves electrical parametres of the metal-semiconductor and dielectric-semiconductor boundary surface formed on a GaAs passivated surface. ^ 4 cl, 2 dwg |
