| 发明名称 |
EEPROM cell with charge loss and manufacturing method thereof, and method of measuring a time information |
| 摘要 |
An EEPROM memory cell includes a dual-gate MOS transistor in which the two gates are separated by an insulation layer. The insulation layer includes a first portion and a second portion having lower insulation properties than the first one. The second portion is located at least partially above a channel region of the transistor. |
| 申请公布号 |
EP2240956(A1) |
申请公布日期 |
2010.10.20 |
| 申请号 |
EP20080869950 |
申请日期 |
2008.12.31 |
| 申请人 |
ST MICROELECTRONICS (ROUSSET) SAS |
发明人 |
FORNARA, PASCAL |
| 分类号 |
H01L21/28;G04F10/10;G11C16/04;G11C16/28;G11C16/34;G11C27/00;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/51;H01L29/66;H01L29/788 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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