| 摘要 |
MRAM includes a first wiring, a second wiring, and a memory cell. The first wiring extends to a first direction, and the second wiring extends to a second direction. The memory cell includes a free magnetic layer in which a plurality of magnetic layers coupled anti-ferromagnetically through non-magnetic layers are laminated, and is provided at an intersection of the first and second wirings. The magnetization direction of the free magnetic layer is different from the first and second directions. The writing method includes (a) reading a first data stored in the memory cell; (b) comparing a second data to be written to the memory cell and the first data; and (c) changing a direction of a first write current supplied to the first wiring and a direction of the second write current to be supplied to the second wiring, when the first data and second data are different.
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