发明名称 Semiconductor device and method for manufacturing same
摘要 The absorption of moisture from a wall surface of an apertured part formed in an interlayer insulating film in accordance with a light-receiving part of a light detector is minimized and deterioration of wiring in the interlayer insulating film is prevented. A position that corresponds to a light-receiving part 52 of a wiring-structure layer 90 obtained by layering an Al layer and an interlayer insulating film composed of SOG or another material is etched, and an apertured part 120 is formed. A silicon nitride film 130 is then deposited on a side-wall surface and bottom surface of the apertured part 120 via CVD. The silicon nitride layer 130 prevents moisture from infiltrating the wiring-structure layer 90.
申请公布号 US7816748(B2) 申请公布日期 2010.10.19
申请号 US20070707076 申请日期 2007.02.16
申请人 SANYO ELECTRIC CO., LTD. 发明人 NOMURA YOJI
分类号 H01L27/14;H01L31/062 主分类号 H01L27/14
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