发明名称 Memory controller with variable zone size
摘要 Disclosed is a method of partitioning a memory, comprising dividing the memory into a first plurality of sub-zones, allocating a plurality of spare blocks in each of the first plurality of sub-zones, resizing the first plurality of sub-zones to a second plurality of sub-zones different from the first plurality, and reallocating the plurality of spare blocks among the second plurality of sub-zones. A circuit for an improved memory controller is described also.
申请公布号 US7818701(B1) 申请公布日期 2010.10.19
申请号 US20060644073 申请日期 2006.12.22
申请人 CYPRESS SEMICONDUCTOR CORPORATION 发明人 KOLOKOWSKY STEPHEN
分类号 G06F17/50;G06F13/00 主分类号 G06F17/50
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