发明名称 |
NON-VOLATILE RAM, SOLID STATE DIRVE INCLUDING THE SAME, AND COMPUTER SYSTEM INCLUDING THE SAME |
摘要 |
PURPOSE: A non-volatile ram, a solid state drive including the same, and a computer system including the same are provided to prevent the fail of an initial resistor by monitoring external temperature condition of data programming point and after that. CONSTITUTION: A buffer(140) buffers data to be programmed in a RAM array(150). The buffer buffers data which is extracted from the nonvolatile RAM array. A control block(110) extracts the nonvolatile RAM array and the buffer. The nonvolatile RAM array is a PRAM(Phase-change Random Access Memory) array. |
申请公布号 |
KR20100112256(A) |
申请公布日期 |
2010.10.19 |
申请号 |
KR20090030672 |
申请日期 |
2009.04.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON, MIN CHEOL;SHIN, DONG JUN;YOO, SUN ME;PARK, JONG CHUL |
分类号 |
G11C16/26;G11C16/06;G11C16/34 |
主分类号 |
G11C16/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|