发明名称 NON-VOLATILE RAM, SOLID STATE DIRVE INCLUDING THE SAME, AND COMPUTER SYSTEM INCLUDING THE SAME
摘要 PURPOSE: A non-volatile ram, a solid state drive including the same, and a computer system including the same are provided to prevent the fail of an initial resistor by monitoring external temperature condition of data programming point and after that. CONSTITUTION: A buffer(140) buffers data to be programmed in a RAM array(150). The buffer buffers data which is extracted from the nonvolatile RAM array. A control block(110) extracts the nonvolatile RAM array and the buffer. The nonvolatile RAM array is a PRAM(Phase-change Random Access Memory) array.
申请公布号 KR20100112256(A) 申请公布日期 2010.10.19
申请号 KR20090030672 申请日期 2009.04.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON, MIN CHEOL;SHIN, DONG JUN;YOO, SUN ME;PARK, JONG CHUL
分类号 G11C16/26;G11C16/06;G11C16/34 主分类号 G11C16/26
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