发明名称 |
Operating method of memory device |
摘要 |
An operating method of a memory array is provided. The operating method includes performing a programming operation. The programming operation is performed by applying a first voltage to a bit line of the memory array and a second voltage to a plurality of word lines of the memory array to cause simultaneously programming a plurality of selected memory cells in the memory array.
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申请公布号 |
US7817472(B2) |
申请公布日期 |
2010.10.19 |
申请号 |
US20080169155 |
申请日期 |
2008.07.08 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
KUO MING-CHANG;LEE MING-HSIU;WU CHAO-I |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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