发明名称 |
Vertically stacked field programmable nonvolatile memory and method of fabrication |
摘要 |
A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
|
申请公布号 |
US7816189(B2) |
申请公布日期 |
2010.10.19 |
申请号 |
US20070925723 |
申请日期 |
2007.10.26 |
申请人 |
SANDISK 3D LLC |
发明人 |
SUBRAMANIAN VIVEK;CLEEVES JAMES M. |
分类号 |
H01L21/82;G11C11/56;G11C17/14;G11C17/16;H01L27/102 |
主分类号 |
H01L21/82 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|